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IRF5305S

Name: IRF5305S
Brand: Infineon

P-Channel 55 V 31A (Tc) 3.8W (Ta), 110W (Tc) Surface Mount D2PAK

Availability: In Stock

Package Type: D2PAK

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Specifications for the IRF5305S

Part Name	IRF5305S
Manufacturer	Infineon Technologies
RoHS	True
Formats Available for Symbols and Footprints	Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus
Datasheet	See Datasheet PDF
Maximum Continuous Drain Current (A)	31 A
Transistor Material	Si
Width	9.65 (mm)
Transistor Configuration	Single
Maximum Drain Source Voltage (V)	55 V
Maximum Gate Threshold Voltage (V)	4 (V)
Package Type	D2PAK (TO-263)
Number Of Elements Per Chip	1
Minimum Gate Threshold Voltage (V)	2 (V)
Maximum Operating Temperature	+175 °C
Channel Type	P
Length	10.67 (mm)
Typical Gate Charge Vgs	63 nC @ 10 V
Pin Count	3
Mounting Type	Surface Mount
Channel Mode	Enhancement
Maximum Power Dissipation	110 W
Series	HEXFET
Maximum Gate Source Voltage (V)	-20 V, +20 V
Height	4.83 (mm)
Minimum Operating Temperature	-55 °C
Forward Diode Voltage (V)	1.3 (V)
Maximum Drain Source Resistance	60 mΩ

Inventory for the IRF5305S by Infineon from major distributors.

Supplier	Quantity	Price
★ Featured	19,502		Visit Site
★ Featured	16,736	70 x $4.31	Visit Site
Arrow Europe	1,600	800 x $0.83	Visit Site
Verical	392		Visit Site